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| BCW 65, BCW 66 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Base current - Basis-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IB IBM Tj TS Grenzwerte (TA = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65...+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB = 45 V IE = 0, VCB = 45 V, Tj = 150/C IC = 0, VEB = 4 V BCW 65 BCW 66 ICB0 ICB0 ICB0 ICB0 IEB0 - - - - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 20 nA 20 :A 20 nA 20 :A 20 nA Emitter-Base cutoff current - Emitterreststrom 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 42 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspg. 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA BCW 65A / 66F VCE = 10 V, IC = 100 :A BCW 65B / 66G BCW 65C / 66H BCW 65A / 66F VCE = 1 V, IC = 10 mA BCW 65B / 66G BCW 65C / 66H BCW 65A / 66F VCE = 1 V, IC = 100 mA BCW 65B / 66G BCW 65C / 66H BCW 65A / 66F VCE = 2 V, IC = 500 mA BCW 65B / 66G BCW 65C / 66H Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung BCW 65A = EA BCW 66F = EF fT CCB0 CEB0 - - - RthA VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE - - - - 35 50 80 75 110 180 100 160 250 - - - BCW 65, BCW 66 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - 160 250 350 35 60 100 170 MHz 6 pF 60 pF Max. 300 mV 700 mV 1.25 V 2V - - - - - - 250 400 630 - - - - - - 420 K/W 2) BCW 67, BCW 68 BCW 65B = EB BCW 66G = EG BCW 65C = EC BCW 66H = EH Base saturation voltage - Basis-Sattigungsspannung 1) DC current gain - Kollektor-Basis-Stromverhaltnis 1) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 43 |
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